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| Artikelnr.:
3523E-2183055 Fabrikantnr.:
IPD90N10S4L06ATMA1 EAN/GTIN:
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| The Infineon OptiMOS™-T2 series N-channel power MOSFET. It has low switching and conduction power losses for high thermal efficiency.N-channel - Enhancement mode MSL1 up to 260°C peak reflow 175°C operating temperature Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 90 A | Maximum Drain Source Voltage: | 100 V | Package Type: | DPAK (TO-252) | Series: | OptiMOS™ -T2 | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 0.0066 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 2.1V | Number of Elements per Chip: | 1 | Transistor Material: | Si |
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| Andere zoekwoorden: 2183055, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IPD90N10S4L06ATMA1 |
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