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| Artikelnr.:
3523E-2194228 Fabrikantnr.:
SCTW40N120G2V EAN/GTIN:
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| The STMicroelectronics silicon carbide power MOSFET device has been developed using ST’s advanced and innovative 2nd generation Sic MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.Very high operating junction temperature capability (TJ = 200 °C) Very fast and robust intrinsic body diode Extremely low gate charge and input capacitance Meer informatie: | | Maximum Continuous Drain Current: | 36 A | Maximum Drain Source Voltage: | 1200 V | Package Type: | HiP247 | Series: | SCTW40N | Mounting Type: | Through Hole | Pin Count: | 3 | Maximum Drain Source Resistance: | 0.7 O | Maximum Gate Threshold Voltage: | 4.9V | Number of Elements per Chip: | 1 |
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| Andere zoekwoorden: 2194228, Semiconductors, Discrete Semiconductors, MOSFETs, STMicroelectronics, SCTW40N120G2V |
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