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| Artikelnr.:
3523E-2194239 Fabrikantnr.:
STPSC15H12G2Y-TR EAN/GTIN:
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| The STMicroelectronics 15 A, 1200 V Sic diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature. Housed in D2PAK HV, this diode is perfectly suited for a usage in PFC applications, in OBC, DC/DC for EV, easing the compliance to IEC-60664-1.AEC-Q101 qualified No or negligible reverse recovery Switching behaviour independent of temperature Robust high voltage periphery PPAP capable Operating Tj from -40 °C to 175 °C D²PAK HV creepage distance (anode to cathode) = 5.38 mm min. ECOPACK2 compliant Meer informatie: | | Mounting Type: | Surface Mount | Package Type: | D?PAK HV | Maximum Continuous Forward Current: | 15A | Peak Reverse Repetitive Voltage: | 1200V | Diode Configuration: | Single | Pin Count: | 2 | Number of Elements per Chip: | 1 |
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| Andere zoekwoorden: Schottky-diode, Schottkydiode, 2194239, Semiconductors, Discrete Semiconductors, Schottky Diodes & Rectifiers, STMicroelectronics, STPSC15H12G2YTR |
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