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| Artikelnr.:
3523E-2207393 Fabrikantnr.:
IPB65R190CFDAATMA1 EAN/GTIN:
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| The Infineon 650V Cool MOS CFDA Super junction (SJ) MOSFET is Infineons second generation of market leading automotive qualified high voltage Cool MOS power MOSFETs. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the 650V Cool MOS CFDA series provides also an integrated fast body diode.First 650V automotive qualified technology with integrated fast body diode on the market Limited voltage overshoot during hard commutation – self limiting di/dt and dv/dt Low gate charge value Q g Low Q rr at repetitive commutation on body diode & low Q oss Reduced turn on and turn of delay times Increased safety margin due to higher breakdown voltage Reduced EMI appearance and easy to design in Better light load efficiency Lower switching losses Higher switching frequency and/or higher duty cycle possible High quality and reliability Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 57.2 A | Maximum Drain Source Voltage: | 650 V | Package Type: | D2PAK (TO-263) | Series: | CoolMOS™ P7 | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 0.19 O | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4.5V | Number of Elements per Chip: | 1 |
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| Andere zoekwoorden: 2207393, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IPB65R190CFDAATMA1 |
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