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| Artikelnr.: 3523E-2224613 Fabrikantnr.: AUIRFR4292TRL EAN/GTIN: geen gegevens |
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![](/p.gif) | The Infineon power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.Advanced process technology Ultra-low on-resistance Fast switching Lead-Free, RoHS Compliant Meer informatie: ![](/p.gif) | ![](/p.gif) | Channel Type: | N | Maximum Continuous Drain Current: | 9.3 A | Maximum Drain Source Voltage: | 250 V | Package Type: | DPAK (TO-252) | Series: | HEXFET | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 0.345 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 5V | Number of Elements per Chip: | 1 | Transistor Material: | Silicon |
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![](/p.gif) | Andere zoekwoorden: 2224613, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, AUIRFR4292TRL |
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