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| Artikelnr.:
3523E-2224725 Fabrikantnr.:
IPW65R048CFDAFKSA1 EAN/GTIN:
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| The Infineon design of Cool MOS is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. 600V Cool MOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The 600V C7 is the first technology ever with RDS(on)*A below 1Ohm*mm².Pb-free lead plating RoHS compliant Superior thermal resistance 100% avalanche tested Halogen-free according to IEC61249-2-23 Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 63.3 A | Maximum Drain Source Voltage: | 700 V | Package Type: | TO-247 | Series: | CoolMOS™ | Mounting Type: | Through Hole | Pin Count: | 3 | Maximum Drain Source Resistance: | 0.048 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4.5V | Number of Elements per Chip: | 1 | Transistor Material: | Silicon |
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| Andere zoekwoorden: 2224725, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IPW65R048CFDAFKSA1 |
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