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| Artikelnr.:
3523E-2224798 Fabrikantnr.:
FF900R12ME7B11BOSA1 EAN/GTIN:
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| The Infineon EconoDUAL™ 3 1200 V, 900 A dual TRENCHSTOP™ IGBT7 module with emitter controlled 7 diode, NTC and PressFIT contact technology. Also available with pre-applied Thermal Interface Material.Highest power density Best-in-class VCE sat Tvj op = 175°C overload Improved terminals Optimized creepage distance for 1500 V PV applications Meer informatie: | | Maximum Continuous Collector Current: | 900 A | Maximum Collector Emitter Voltage: | 1200 V | Maximum Gate Emitter Voltage: | 20V | Maximum Power Dissipation: | 20 mW | Configuration: | Dual | Package Type: | AG-ECONOD | Channel Type: | N | Transistor Configuration: | Common Emitter |
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| Andere zoekwoorden: Transistor, Transistors, 2224798, Semiconductors, Discrete Semiconductors, IGBTs, Infineon, FF900R12ME7B11BOSA1 |
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