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| Artikelnr.:
3523E-2224895 Fabrikantnr.:
IPB60R180P7ATMA1 EAN/GTIN:
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| The Infineon 600V CoolMOS™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.ESD ruggedness of ≥ 2kV (HBM class 2) Integrated gate resistor R G Rugged body diode Wide portfolio in through hole and surface mount packages Both standard grade and industrial grade parts are available Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 18 A | Maximum Drain Source Voltage: | 600 V | Package Type: | D2PAK (TO-263) | Series: | CoolMOS™ P7 | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 180 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4V | Number of Elements per Chip: | 1 | Transistor Material: | Si |
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| Andere zoekwoorden: 2224895, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IPB60R180P7ATMA1 |
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