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| Artikelnr.:
3523E-2224900 Fabrikantnr.:
IPD50R800CEAUMA1 EAN/GTIN:
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| Channel Type = N
Maximum Continuous Drain Current = 5 A
Maximum Drain Source Voltage = 500 V
Series = CoolMOS™
Mounting Type = Surface Mount
Pin Count = 3
Maximum Drain Source Resistance = 800 mΩ
Channel Mode = Enhancement
Maximum Gate Threshold Voltage = 3.5V
Number of Elements per Chip = 1 Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 5 A | Maximum Drain Source Voltage: | 500 V | Package Type: | DPAK (TO-252) | Series: | CoolMOS™ | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 800 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 3.5V | Number of Elements per Chip: | 1 | Transistor Material: | Si |
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| Andere zoekwoorden: 2224900, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IPD50R800CEAUMA1 |
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