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| Artikelnr.:
3523E-2250571 Fabrikantnr.:
IHW30N65R6XKSA1 EAN/GTIN:
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| The Infineon IHW30N65R6 is the 650 V, 30 A IGBT with monolithically integrated diode in TO-247 package with monolithically integrated diode is designed to fulfil demanding requirements of induction heating applications using half-bridge resonant topology.High ruggedness and stable temperature behaviour Low EMI Pb-free lead plating, RoHS compliant Powerful monolithic reverse-conducting diode with low forward voltage Meer informatie: | | Maximum Continuous Collector Current: | 65 A | Maximum Collector Emitter Voltage: | 650 V | Maximum Gate Emitter Voltage: | ±30V | Maximum Power Dissipation: | 160 W | Package Type: | PG-TO247-3 | Pin Count: | 3 |
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| Andere zoekwoorden: Transistors, 2250571, Semiconductors, Discrete Semiconductors, IGBTs, Infineon, IHW30N65R6XKSA1 |
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