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| Artikelnr.:
3523E-2266021 Fabrikantnr.:
2ED2109S06FXUMA1 EAN/GTIN:
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| The Infineon 2ED2109S06F is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is based on SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages of up to - 11 Von VS pin on transient voltage. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction.Floating channel designed for bootstrap operation Operating voltages (VS node) upto + 650 V Maximum bootstrap voltage (VB node) of + 675 V Integrated ultra-fast, low resistance bootstrap diode Meer informatie: | | Output Current: | 290 mA | Supply Voltage: | 20V | Pin Count: | 8 | Fall Time: | 80ns | Package Type: | DSO |
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| Andere zoekwoorden: 2266021, Semiconductors, Power Management ICs, Gate Drivers, Infineon, 2ED2109S06FXUMA1 |
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