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| Artikelnr.: 3523E-2266082 Fabrikantnr.: IKA15N65ET6XKSA2 EAN/GTIN: geen gegevens |
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| The Infineon IKA10N65ET6 is good thermal performance, especially at higher frequencies and increased design margin and reliability. It is very soft, fast recovery anti-parallel rapid diode. It has low losses to meet energy efficient requirements.Very low VCE(sat) 1.5V(typ.) Maximum junction temperature 175°C Low gate chargeQG Pb-free lead platingRoHS compliant Meer informatie: | | Maximum Continuous Collector Current: | 34 A | Maximum Collector Emitter Voltage: | 650 V | Maximum Gate Emitter Voltage: | 30V | Maximum Power Dissipation: | 35.3 W | Number of Transistors: | 1 | Configuration: | Single | Package Type: | PG-TO220 | Channel Type: | N | Pin Count: | 3 | Transistor Configuration: | Single |
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| Andere zoekwoorden: Power-transistor, Schakeltransistor, Schakeltransistors, Transistor, Transistors, 2266082, Semiconductors, Discrete Semiconductors, IGBTs, Infineon, IKA15N65ET6XKSA2 |
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