| ![](/p.gif) |
![](/p.gif) |
| Artikelnr.: 3523E-2282840 Fabrikantnr.: SiHA5N80AE-GE3 EAN/GTIN: geen gegevens |
| |
|
| ![](/p.gif) | ![](/p.gif) |
![](/p.gif) | Channel Type = N Maximum Continuous Drain Current = 3 A Maximum Drain Source Voltage = 850 V Series = E Series Mounting Type = Through Hole Pin Count = 3 Maximum Drain Source Resistance = 1.35 Ω Channel Mode = Enhancement Maximum Gate Threshold Voltage = 4V Number of Elements per Chip = 1 Meer informatie: ![](/p.gif) | ![](/p.gif) | Channel Type: | N | Maximum Continuous Drain Current: | 3 A | Maximum Drain Source Voltage: | 850 V | Package Type: | TO-220 FP | Series: | E Series | Mounting Type: | Through Hole | Pin Count: | 3 | Maximum Drain Source Resistance: | 1.35 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4V | Number of Elements per Chip: | 1 | Transistor Material: | Si |
|
| ![](/p.gif) | ![](/p.gif) |
![](/p.gif) | | ![](/p.gif) | ![](/p.gif) |
![](/p.gif) | Andere zoekwoorden: 2282840, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SiHA5N80AEGE3 |
| ![](/p.gif) | ![](/p.gif) |
| |