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| Artikelnr.:
3523E-2282897 Fabrikantnr.:
SiR186LDP-T1-RE3 EAN/GTIN:
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| Channel Type = N
Maximum Continuous Drain Current = 80.3 A
Maximum Drain Source Voltage = 60 V
Series = TrenchFET
Mounting Type = Surface Mount
Pin Count = 8
Maximum Drain Source Resistance = 0.0044 Ω
Channel Mode = Enhancement
Maximum Gate Threshold Voltage = 2.5V
Number of Elements per Chip = 2 Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 80.3 A | Maximum Drain Source Voltage: | 60 V | Package Type: | PowerPAK SO-8 | Series: | TrenchFET | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 0.0044 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 2.5V | Number of Elements per Chip: | 2 | Transistor Material: | Si |
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| Andere zoekwoorden: 2282897, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SiR186LDPT1RE3 |
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