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| Artikelnr.:
3523E-2282921 Fabrikantnr.:
SiS176LDN-T1-GE3 EAN/GTIN:
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| Channel Type = N
Maximum Continuous Drain Current = 42.3 A
Maximum Drain Source Voltage = 70 V
Series = TrenchFET
Mounting Type = Surface Mount
Pin Count = 8
Maximum Drain Source Resistance = 0.0109 Ω
Channel Mode = Enhancement
Maximum Gate Threshold Voltage = 1.6V
Number of Elements per Chip = 1 Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 42.3 A | Maximum Drain Source Voltage: | 70 V | Package Type: | PowerPAK 1212-8 | Series: | TrenchFET | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 0.0109 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 1.6V | Number of Elements per Chip: | 1 | Transistor Material: | Si |
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| Andere zoekwoorden: 2282921, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SiS176LDNT1GE3 |
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