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| Artikelnr.:
3523E-2326756 Fabrikantnr.:
ISC0802NLSATMA1 EAN/GTIN:
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| Channel Type = N
Maximum Continuous Drain Current = 150 A
Maximum Drain Source Voltage = 100 V
Series = OptiMOS™ 5
Mounting Type = Surface Mount
Pin Count = 8
Maximum Drain Source Resistance = 0.0036 O, 0.0048 O
Maximum Gate Threshold Voltage = 2.3V
Number of Elements per Chip = 1 Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 150 A | Maximum Drain Source Voltage: | 100 V | Package Type: | SuperSO8 5 x 6 | Series: | OptiMOS™ 5 | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 0.0036 O, 0.0048 O | Maximum Gate Threshold Voltage: | 2.3V | Number of Elements per Chip: | 1 | Transistor Material: | Si |
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| Andere zoekwoorden: 2326756, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, ISC0802NLSATMA1 |
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