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| Artikelnr.:
3523E-2352700 Fabrikantnr.:
R8003KNXC7G EAN/GTIN:
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| Channel Type = N
Maximum Continuous Drain Current = 3 A
Maximum Drain Source Voltage = 800 V
Package Type = TO-220FM
Mounting Type = Through Hole
Pin Count = 3
Maximum Drain Source Resistance = 1.8 Ω
Channel Mode = Enhancement
Maximum Gate Threshold Voltage = 4.5V
Number of Elements per Chip = 1 Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 3 A | Maximum Drain Source Voltage: | 800 V | Package Type: | TO-220FM | Mounting Type: | Through Hole | Pin Count: | 3 | Maximum Drain Source Resistance: | 1.8 Ω | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4.5V | Number of Elements per Chip: | 1 |
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| Andere zoekwoorden: 2352700, Semiconductors, Discrete Semiconductors, MOSFETs, ROHM, R8003KNXC7G |
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