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| Artikelnr.: 3523E-2626729 Fabrikantnr.: IRF3808PBF EAN/GTIN: geen gegevens |
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| Channel Type = N Maximum Continuous Drain Current = 140 A Maximum Drain Source Voltage = 75 V Package Type = TO-220AB Mounting Type = Through Hole Pin Count = 3 Channel Mode = Enhancement Transistor Material = Silicon Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 140 A | Maximum Drain Source Voltage: | 75 V | Package Type: | TO-220AB | Series: | HEXFET | Mounting Type: | Through Hole | Pin Count: | 3 | Channel Mode: | Enhancement | Number of Elements per Chip: | 2 | Transistor Material: | Silicon |
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| Andere zoekwoorden: 2626729, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IRF3808PBF |
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