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| Artikelnr.:
3523E-8152629 Fabrikantnr.:
SIHF620S-GE3 EAN/GTIN:
5059040677098 |
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| N-Channel MOSFET, 200V to 250V, Vishay Semiconductor Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 5.2 A | Maximum Drain Source Voltage: | 200 V | Package Type: | D2PAK (TO-263) | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 800 mΩ | Channel Mode: | Enhancement | Minimum Gate Threshold Voltage: | 2V | Maximum Power Dissipation: | 50 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | -20 V, +20 V | Length: | 10.67mm | Maximum Operating Temperature: | +150 °C | Number of Elements per Chip: | 1 |
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| Andere zoekwoorden: 8152629, Semiconductors, Discrete Semiconductors, MOSFETs, Vishay, SIHF620SGE3 |
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