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| Artikelnr.:
3523E-8235500 Fabrikantnr.:
BSS308PEH6327XTSA1 EAN/GTIN:
5060641242813 |
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| Infineon OptiMOS™P P-Channel Power MOSFETs. The Infineon OptiMOS ™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.. Enhancement mode Avalanche rated Low switching and conduction power losses Pb-free lead plating; RoHS compliant Standard packages OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C Meer informatie: | | Channel Type: | P | Maximum Continuous Drain Current: | 1.6 A | Maximum Drain Source Voltage: | 30 V | Package Type: | SOT-23 | Series: | OptiMOS P | Mounting Type: | Surface Mount | Pin Count: | 3 | Maximum Drain Source Resistance: | 130 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 1V | Minimum Gate Threshold Voltage: | 2V | Maximum Power Dissipation: | 500 mW | Transistor Configuration: | Single | Maximum Gate Source Voltage: | -20 V, +20 V | Length: | 2.9mm |
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| Andere zoekwoorden: 8235500, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, BSS308PEH6327XTSA1 |
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