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| Artikelnr.:
3523E-9110777 Fabrikantnr.:
BSC077N12NS3GATMA1 EAN/GTIN:
5059043150550 |
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| Infineon OptiMOS™3 Power MOSFETs, 100V and over Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 98 A | Maximum Drain Source Voltage: | 120 V | Package Type: | TDSON | Series: | OptiMOS™ 3 | Mounting Type: | Surface Mount | Pin Count: | 8 | Maximum Drain Source Resistance: | 7.7 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 4V | Minimum Gate Threshold Voltage: | 2V | Maximum Power Dissipation: | 139 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | -20 V, +20 V | Length: | 5.35mm |
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| Andere zoekwoorden: 9110777, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, BSC077N12NS3GATMA1 |
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