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N-Channel MOSFET, 120 A, 75 V, 3-Pin D2PAK Infineon IPB020NE7N3GATMA1


Aantal:  verpakking  
Productinformatie
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Artikelnr.:
     3523E-9110897
Merk:
     Infineon
Fabrikantnr.:
     IPB020NE7N3GATMA1
EAN/GTIN:
     5059043259567
Zoekwoorden:
Power-transistor
MOSFET
MOSFET-transistor
Infineon OptiMOS™3 Power MOSFETs, 60 to 80V. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Pb-free plating
Meer informatie:
Channel Type:
N
Maximum Continuous Drain Current:
120 A
Maximum Drain Source Voltage:
75 V
Package Type:
D2PAK (TO-263)
Series:
OptiMOS™ 3
Mounting Type:
Surface Mount
Pin Count:
3
Maximum Drain Source Resistance:
2 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
3.8V
Minimum Gate Threshold Voltage:
2.3V
Maximum Power Dissipation:
300 W
Transistor Configuration:
Single
Maximum Gate Source Voltage:
-20 V, +20 V
Length:
10.31mm
Andere zoekwoorden: 9110897, Semiconductors, Discrete Semiconductors, MOSFETs, Infineon, IPB020NE7N3GATMA1
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Prijs excl. BTW
€ 1.655,00*
1 verpakking omvat 1.000 stuks (€ 1,655* per stuk)
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