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| Artikelnr.:
3523E-9158849 Fabrikantnr.:
C3M0120090D EAN/GTIN:
5059045425588 |
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| Wolfspeed Silicon Carbide Power MOSFETs. Wolfspeed Z-Fet™, C2M™ ; C3M™ Silicon Carbide Power MOSFETs. A range of second generation SiC MOSFETs from Cree's power division Wolfspeed which deliver industry-leading power density and switching efficiency. These low-capacitance devices allow higher switching frequencies and have reduced cooling requirements improving overall system operating efficiency. Enhancement-mode N-channel SiC technology High Drain-Source breakdown voltages - up to 1200V Multiple devices are easy to parallel and simple to drive High speed switching with low on-resistance Latch-up resistant operation Meer informatie: | | Channel Type: | N | Maximum Continuous Drain Current: | 23 A | Maximum Drain Source Voltage: | 900 V | Package Type: | TO-247 | Mounting Type: | Through Hole | Pin Count: | 3 | Maximum Drain Source Resistance: | 155 mΩ | Channel Mode: | Enhancement | Maximum Gate Threshold Voltage: | 3.5V | Minimum Gate Threshold Voltage: | 1.8V | Maximum Power Dissipation: | 97 W | Transistor Configuration: | Single | Maximum Gate Source Voltage: | -8 V, +18 V | Length: | 16.13mm | Maximum Operating Temperature: | +150 °C |
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| Andere zoekwoorden: 9158849, Semiconductors, Discrete Semiconductors, MOSFETs, Wolfspeed, C3M0120090D |
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