ONSEMI FQB55N10TM MOSFET, N-CH, 100V, 55A, TO-263-3

Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.021 ohm Product Range QFET MSL MSL 1 - Unlimited No. of Pins 3 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 55 A Operating Temperature Max 175 °C Transistor Case Style TO-263 (D2PAK) Drain Source Voltage Vds 100 V Power Dissipation 155 W Qualification - Gate Source Threshold Voltage Max 4 V SVHC Lead (23-Jan-2024)