VISHAY SIDR680DP-T1-GE3 MOSFET, N-CH, 80V, 100A, 150DEG C, 125W

Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.0024 ohm Product Range TrenchFET Gen IV MSL MSL 1 - Unlimited No. of Pins 8 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 100 A Operating Temperature Max 150 °C Transistor Case Style PowerPAK SO Drain Source Voltage Vds 80 V Power Dissipation 125 W Qualification - Gate Source Threshold Voltage Max 3.4 V SVHC To Be Advised