ONSEMI FCMT199N60 MOSFET, N-CH, 20.2A, 600V, PQFN

Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.17 ohm Product Range SuperFET II MSL MSL 1 - Unlimited No. of Pins 4 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 20.2 A Operating Temperature Max 150 °C Transistor Case Style PQFN Drain Source Voltage Vds 600 V Power Dissipation 208 W Qualification - Gate Source Threshold Voltage Max 3.5 V SVHC No SVHC (15-Jan-2018)