VISHAY SIHH100N60E-T1-GE3 MOSFET, N-CH, 600V, 28A, 150DEG C, 174W

Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.085 ohm Product Range E MSL MSL 1 - Unlimited No. of Pins 5 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 28 A Operating Temperature Max 150 °C Transistor Case Style PowerPAK Drain Source Voltage Vds 600 V Power Dissipation 174 W Qualification - Gate Source Threshold Voltage Max 5 V SVHC To Be Advised