VISHAY SISS61DN-T1-GE3 MOSFET, P-CH, -20V, -111.9A, 150DEG C

Rds(on) Test Voltage 4.5 V Drain Source On State Resistance 0.0029 ohm Product Range TrenchFET Gen III MSL MSL 1 - Unlimited No. of Pins 8 Pins Transistor Mounting Surface Mount Channel Type P Channel Continuous Drain Current Id 111.9 A Operating Temperature Max 150 °C Transistor Case Style PowerPAK 1212 Drain Source Voltage Vds 20 V Power Dissipation 65.8 W Qualification - Gate Source Threshold Voltage Max 900 mV SVHC Lead (10-Jun-2022)