VISHAY SIHD186N60EF-GE3 MOSFET, N-CH, 600V, 19A, TO-252-3

Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.175 ohm Product Range EF MSL MSL 1 - Unlimited No. of Pins 3 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 19 A Operating Temperature Max 150 °C Transistor Case Style TO-252 (DPAK) Drain Source Voltage Vds 600 V Power Dissipation 156 W Qualification - Gate Source Threshold Voltage Max 5 V SVHC Lead (19-Jan-2021)