VISHAY SISS22LDN-T1-GE3 MOSFET, N-CH, 60V, 92.5A, 150DEG C

Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.00291 ohm Product Range TrenchFET Gen IV MSL MSL 1 - Unlimited No. of Pins 8 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 92.5 A Operating Temperature Max 150 °C Transistor Case Style PowerPAK 1212-8S Drain Source Voltage Vds 60 V Power Dissipation 65.7 W Qualification - Gate Source Threshold Voltage Max 2.5 V SVHC To Be Advised