VISHAY SIHU6N80AE-GE3 MOSFET, N-CH, 800V, 5A, 150DEG C, 62.5W

Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.826 ohm Product Range E MSL MSL 1 - Unlimited No. of Pins 3 Pins Transistor Mounting Through Hole Channel Type N Channel Continuous Drain Current Id 5 A Operating Temperature Max 150 °C Transistor Case Style TO-251 Drain Source Voltage Vds 800 V Power Dissipation 62.5 W Qualification - Gate Source Threshold Voltage Max 4 V SVHC To Be Advised