VISHAY SQ9407EY-T1_GE3 MOSFET, P-CH, 60V, 4.6A, 175DEG C, 3.75W

Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.067 ohm Product Range TrenchFET No. of Pins 8 Pins Transistor Mounting Surface Mount Channel Type P Channel Continuous Drain Current Id 4.6 A Operating Temperature Max 175 °C Transistor Case Style SOIC Drain Source Voltage Vds 60 V Power Dissipation 3.75 W Qualification AEC-Q101 Gate Source Threshold Voltage Max 2 V SVHC To Be Advised