VISHAY SIHD11N80AE-GE3 MOSFET, N-CH, 800V, 8A, TO-252

Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.391 ohm Product Range E No. of Pins 3 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 8 A Operating Temperature Max 150 °C Transistor Case Style TO-252 (DPAK) Drain Source Voltage Vds 800 V Power Dissipation 78 W Qualification - Gate Source Threshold Voltage Max 4 V SVHC To Be Advised