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| Artikelnr.:
5696-3573218 Fabrikantnr.:
BSM180C12P2E202 EAN/GTIN:
geen gegevens |
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| Rds(on) Test Voltage - Drain Source On State Resistance - Product Range - No. of Pins - MOSFET Module Configuration Chopper Channel Type N Channel Continuous Drain Current Id 204 A Operating Temperature Max 150 °C Transistor Case Style Module Drain Source Voltage Vds 1.2 kV Power Dissipation 1.36 kW Gate Source Threshold Voltage Max 4 V SVHC Lead (23-Jan-2024) |
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| Andere zoekwoorden: (SiC), Carbide, Discretes, FETs, Modules, MOSFETs, Semiconductors, Silicon, ROHM, BSM180C12P2E202, 3573218, 357-3218 |
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