VISHAY SISS52DN-T1-GE3 MOSFET, N-CH, 30V, 162A, POWERPAK 1212

Rds(on) Test Voltage 10 V Drain Source On State Resistance 950 µohm Product Range TrenchFET Gen V MSL MSL 1 - Unlimited No. of Pins 8 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 162 A Operating Temperature Max 150 °C Transistor Case Style PowerPAK 1212-8S Drain Source Voltage Vds 30 V Power Dissipation 57 W Qualification - Gate Source Threshold Voltage Max 2.2 V SVHC Lead (10-Jun-2022)