ROHM R6504KND3TL1 MOSFET, N-CH, 650V, 4A, TO-252

Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.955 ohm Product Range - No. of Pins 3 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 4 A Operating Temperature Max 150 °C Transistor Case Style TO-252 (DPAK) Drain Source Voltage Vds 650 V Power Dissipation 58 W Qualification - Gate Source Threshold Voltage Max 5 V SVHC Lead (23-Jan-2024)