VISHAY SQS660CENW-T1_GE3 MOSFET, N-CH, 60V, 18A, POWERPAK 1212-8W

Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.0091 ohm Product Range TrenchFET No. of Pins 8 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 18 A Operating Temperature Max 175 °C Transistor Case Style PowerPAK 1212-8W Drain Source Voltage Vds 60 V Power Dissipation 62.5 W Qualification AEC-Q101 Gate Source Threshold Voltage Max 2 V SVHC No SVHC (10-Jun-2022)