VISHAY SIS590DN-T1-GE3 DUAL MOSFET, N & P-CH, 100V, 4A, 150DEGC

Drain Source Voltage Vds N Channel 100 V Continuous Drain Current Id P Channel 4 A Product Range TrenchFET Series No. of Pins 8 Pins Drain Source Voltage Vds P Channel 100 V Continuous Drain Current Id N Channel 4 A Drain Source On State Resistance N Channel 0.197 ohm Channel Type N and P Channel Drain Source On State Resistance P Channel 0.197 ohm Power Dissipation N Channel 23.1 W Power Dissipation P Channel 23.1 W Operating Temperature Max 150 °C Transistor Case Style PowerPAK 1212 Qualification - SVHC To Be Advised