VISHAY SI4455DY-T1-GE3 MOSFET, P-CH, 150V, 2.8A, SOIC

Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.245 ohm Product Range TrenchFET MSL MSL 1 - Unlimited No. of Pins 8 Pins Transistor Mounting Surface Mount Channel Type P Channel Continuous Drain Current Id 2.8 A Operating Temperature Max 150 °C Transistor Case Style SOIC Drain Source Voltage Vds 150 V Power Dissipation 5.9 W Qualification - Gate Source Threshold Voltage Max 4 V SVHC To Be Advised