VISHAY SQJQ112E-T1_GE3 MOSFET, N-CH, 100V, 296A, POWERPAK

Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.0021 ohm Product Range TrenchFET Gen IV MSL MSL 1 - Unlimited No. of Pins 5 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 296 A Operating Temperature Max 175 °C Transistor Case Style PowerPAK Drain Source Voltage Vds 100 V Power Dissipation 600 W Qualification AEC-Q101 Gate Source Threshold Voltage Max 3 V SVHC To Be Advised