VISHAY SQJA26EP-T1_GE3 MOSFET, N-CH, 30V, 410A, POWERPAK SO

Rds(on) Test Voltage 10 V Drain Source On State Resistance 660 µohm Product Range TrenchFET Gen IV MSL - No. of Pins 8 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 410 A Operating Temperature Max 175 °C Transistor Case Style PowerPAK SO Drain Source Voltage Vds 30 V Power Dissipation 500 W Qualification AEC-Q101 Gate Source Threshold Voltage Max 2 V SVHC To Be Advised