VISHAY SIHP6N65E-GE3 MOSFET, N-CH, 650V, 7A, TO-220AB

Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.5 ohm Product Range E Series No. of Pins 3 Pins Transistor Mounting Through Hole Channel Type N Channel Transistor Case Style TO-220AB Continuous Drain Current Id 7 A Operating Temperature Max 150 °C Drain Source Voltage Vds 650 V Power Dissipation 78 W Qualification - Gate Source Threshold Voltage Max 4 V SVHC To Be Advised