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| Artikelnr.: 5696-4049759 Fabrikantnr.: TW045N120C,S1F(S EAN/GTIN: geen gegevens |
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![](/p.gif) | Rds(on) Test Voltage 18 V Drain Source On State Resistance 0.059 ohm Product Range - No. of Pins 3 Pins MOSFET Module Configuration Single Channel Type N Channel Continuous Drain Current Id 40 A Operating Temperature Max 175 °C Transistor Case Style TO-247 Drain Source Voltage Vds 1.2 kV Power Dissipation 182 W Gate Source Threshold Voltage Max 5 V SVHC To Be Advised |
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![](/p.gif) | Andere zoekwoorden: (SiC), Carbide, Discretes, FETs, Modules, MOSFETs, Semiconductors, Silicon, TOSHIBA, TW045N120C,S1F(S, 4049759, 404-9759 |
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