| |
|
| Artikelnr.: 5696-4168759 Fabrikantnr.: BSM450D12P4G102 EAN/GTIN: geen gegevens |
| | |
|
| | |
| Rds(on) Test Voltage - Drain Source On State Resistance - Product Range - No. of Pins 11 Pins MOSFET Module Configuration Half Bridge Channel Type Dual N Channel Transistor Case Style Module Continuous Drain Current Id 447 A Operating Temperature Max 150 °C Drain Source Voltage Vds 1.2 kV Power Dissipation 1.45 kW Gate Source Threshold Voltage Max 4.8 V SVHC No SVHC (17-Jan-2023) |
| | |
| | | |
| Andere zoekwoorden: (SiC), Carbide, Discretes, FETs, Modules, MOSFETs, Semiconductors, Silicon, ROHM, BSM450D12P4G102, 4168759, 416-8759 |
| | |
| |