| ![](/p.gif) |
![](/p.gif) |
| Artikelnr.: 5696-4173137 Fabrikantnr.: TK65E10N1,S1X(S EAN/GTIN: geen gegevens |
| | |
|
| ![](/p.gif) | ![](/p.gif) |
![](/p.gif) | Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.004 ohm Product Range U-MOSVIII-H Series No. of Pins 3 Pins Transistor Mounting Through Hole Channel Type N Channel Continuous Drain Current Id 148 A Operating Temperature Max 150 °C Transistor Case Style TO-220 Drain Source Voltage Vds 100 V Power Dissipation 192 W Qualification - Gate Source Threshold Voltage Max 4 V SVHC To Be Advised |
| ![](/p.gif) | ![](/p.gif) |
![](/p.gif) | | ![](/p.gif) | ![](/p.gif) |
![](/p.gif) | Andere zoekwoorden: Schakeltransistors, Transistor, Transistors, Discretes, FETs, MOSFETs, Semiconductors, Single, TOSHIBA, TK65E10N1,S1X(S, 4173137, 417-3137 |
| ![](/p.gif) | ![](/p.gif) |
| |