| ![](/p.gif) |
![](/p.gif) |
| Artikelnr.: 5696-4173167 Fabrikantnr.: TK8A60W,S4VX(M EAN/GTIN: geen gegevens |
| | |
|
| ![](/p.gif) | ![](/p.gif) |
![](/p.gif) | Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.42 ohm Product Range - No. of Pins 3 Pins Transistor Mounting Through Hole Channel Type N Channel Continuous Drain Current Id 8 A Operating Temperature Max 150 °C Transistor Case Style TO-220SIS Drain Source Voltage Vds 600 V Power Dissipation 30 W Qualification - Gate Source Threshold Voltage Max 3.7 V SVHC No SVHC (17-Jan-2023) |
| ![](/p.gif) | ![](/p.gif) |
![](/p.gif) | | ![](/p.gif) | ![](/p.gif) |
![](/p.gif) | Andere zoekwoorden: Discretes, FETs, MOSFETs, Semiconductors, Single, TOSHIBA, TK8A60W,S4VX(M, 4173167, 417-3167 |
| ![](/p.gif) | ![](/p.gif) |
| |