Transistors | MERCATEO (Pagina 697/866)

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onsemi NJVMJK45H11TWG PNP Bipolar Transistor, 8 A, -80 V dc, 4-Pin LFPAK4 (1 zoekresultaat)

Transistor Type = PNP Maximum DC Collector Current = 8 A Maximum Collector Emitter Voltage = -80 V dc Package Type = LFPAK4 Mounting Type = Surface Mount Pin Count = 4 Number of Elements per Chip = 1

onsemi

NJVMJK45H11TWG

vanaf € 0,524*
per stuk

onsemi FGH4L50T65SQD IGBT, 80 A 650 V TO-247-4LD (1 zoekresultaat)

Maximum Continuous Collector Current = 80 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = 15V Maximum Power Dissipation = 268 W Package Type = TO-247-4LD

onsemi

FGH4L50T65SQD

vanaf € 1,74*
per stuk

onsemi NFAQ0560R46T IGBT 2.6 V NFAQ (1 zoekresultaat)

Maximum Collector Emitter Voltage = 2.6 V Maximum Gate Emitter Voltage = 600V Package Type = NFAQ

onsemi

NFAQ0560R46T

vanaf € 2.494,392*
per 400 stuks

onsemi NXH040F120MNF1PTG IGBT Module F1-4PACK Press-fit Pins with pre-applied thermal interface material (TIM) (Pb-Free (1 zoekresultaat)

Maximum Power Dissipation = 74 W

onsemi

NXH040F120MNF1PTG

vanaf € 3.013,45408*
per 28 stuks

onsemi BD241CG NPN Digital Transistor, 115 V, 3-Pin TO-220 (2 zoekresultaten)

The 3 A, 100V PNP Bipolar Power Transistor designed for use in general purpose amplifier and switching applications. BD241C (NPN), BD242B (PNP) and BD242C (PNP) are complementary devices.Collector-...

onsemi

BD241CG

vanaf € 0,282*
per stuk

onsemi FGHL50T65MQDT IGBT, 80 A 650 V TO-247-3L (1 zoekresultaat)

Maximum Continuous Collector Current = 80 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = 20V Maximum Power Dissipation = 268 W Package Type = TO-247-3L

onsemi

FGHL50T65MQDT

vanaf € 1,83*
per stuk

onsemi FGHL75T65LQDT IGBT, 80 A 650 V TO-247-3L (1 zoekresultaat)

Maximum Continuous Collector Current = 80 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = 20V Maximum Power Dissipation = 469 W Package Type = TO-247-3L

onsemi

FGHL75T65LQDT

vanaf € 4,49*
per stuk

onsemi BSP52T1G NPN Darlington Transistor, 1 A 80 V HFE:2000, 4-Pin SOT-223 (1 zoekresultaat)

Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard. NPN Darlington Transistors, ON Semiconductor

onsemi

BSP52T1G

vanaf € 0,183*
per stuk

onsemi FGHL75T65MQDT IGBT, 80 A 650 V TO-247-3L (1 zoekresultaat)

Maximum Continuous Collector Current = 80 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = 20V Maximum Power Dissipation = 375 W Package Type = TO-247-3L

onsemi

FGHL75T65MQDT

vanaf € 2,356*
per stuk

onsemi NJVMJK31CTWG NPN Bipolar Transistor, 3 A, 100 V dc, 4-Pin LFPAK4 (1 zoekresultaat)

Transistor Type = NPN Maximum DC Collector Current = 3 A Maximum Collector Emitter Voltage = 100 V dc Package Type = LFPAK4 Mounting Type = Surface Mount Pin Count = 4 Number of Elements per Chip = 1

onsemi

NJVMJK31CTWG

vanaf € 0,537*
per stuk

onsemi NXH25C120L2C2SG 3 Phase IGBT Module, 25 A 650 V DIP26, Through Hole (1 zoekresultaat)

The ON Semiconductor transfer molded power module containing a converter-inverter-brake circuit consisting of six 25 Ampere and 1600 Volts rectifiers, six 25 Ampere and 1200 Volts IGBTs with invers...

onsemi

NXH25C120L2C2SG

vanaf € 42,591*
per stuk

onsemi FGAF40S65AQ IGBT, 80 A 650 V, 3-Pin TO-3PF, Through Hole (1 zoekresultaat)

Using novel field stop IGBT technology, ON semiconductor’s new series of field stop 4th generation of RC IGBTs offer the optimum performance for converter PFC stage of consummer and industrial appl...

onsemi

FGAF40S65AQ

vanaf € 709,6608*
per 360 stuks

onsemi NJVMJK44H11TWG NPN Bipolar Transistor, 8 A, 80 V dc, 4-Pin LFPAK4 (1 zoekresultaat)

Transistor Type = NPN Maximum DC Collector Current = 8 A Maximum Collector Emitter Voltage = 80 V dc Package Type = LFPAK4 Mounting Type = Surface Mount Pin Count = 4 Number of Elements per Chip = 1

onsemi

NJVMJK44H11TWG

vanaf € 0,524*
per stuk

onsemi NXH300B100H4Q2F2SG IGBT Module, 73 A 1000 V 93x47 (SOLDER PIN) (Pb-Free and Halide-Free Solder Pins), Q2BOOST - (1 zoekresultaat)

Maximum Continuous Collector Current = 73 A Maximum Collector Emitter Voltage = 1000 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 79 W

onsemi

NXH300B100H4Q2F2SG

vanaf € 210,133*
per stuk

onsemi FGH4L40T120LQD IGBT, 80 A 1200 V TO-247 (1 zoekresultaat)

Maximum Continuous Collector Current = 80 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = 20V Maximum Power Dissipation = 153 W Package Type = TO-247

onsemi

FGH4L40T120LQD

vanaf € 3,338*
per stuk

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