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onsemi FGY75T95LQDT IGBT 950 V, 3-Pin TO-247, Through Hole (1 zoekresultaat) 
Trench Field Stop 4th generation Low Vcesat IGBT co−packaged with full current rated diodeMaximum Junction Temperature : TJ = 175℃ Positive Temperature Co−efficient for Easy Parallel Operating High...
onsemi
FGY75T95LQDT
vanaf € 188,5101*
per 30 stuks
 
 verpakking
onsemi
NXH020F120MNF1PTG
vanaf € 3.463,81812*
per 28 stuks
 
 verpakking
onsemi NXH350N100H4Q2F2S1G IGBT Module, 303 A 1000 V Q2PACK (Pb-Free/Halide-Free) (1 zoekresultaat) 
Maximum Continuous Collector Current = 303 A Maximum Collector Emitter Voltage = 1000 V Maximum Gate Emitter Voltage = ±20V Maximum Power Dissipation = 592 W Package Type = Q2PACK (Pb-Free/Halide-F...
onsemi
NXH350N100H4Q2F2S1G
vanaf € 117,696*
per stuk
 
 stuk
onsemi FGHL40T65MQDT IGBT, 60 A 650 V TO-247-3L (1 zoekresultaat) 
Maximum Continuous Collector Current = 60 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = 20V Maximum Power Dissipation = 238 W Package Type = TO-247-3L
onsemi
FGHL40T65MQDT
vanaf € 2,725*
per stuk
 
 stuk
onsemi FJT44TF NPN Digital Transistor, 300 mA, 400 V, 3 + Tab-Pin SOT-223 (2 zoekresultaten) 
Transistor Type = NPN Maximum DC Collector Current = 300 mA Maximum Collector Emitter Voltage = 400 V Package Type = SOT-223 (SC-73) Mounting Type = Surface Mount Maximum Power Dissipation = 2 W Mi...
onsemi
FJT44TF
vanaf € 0,625*
per 5 stuks
 
 verpakking
onsemi FGHL50T65MQDTL4 IGBT, 80 A 650 V TO-247-4LD (1 zoekresultaat) 
Maximum Continuous Collector Current = 80 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = 20V Number of Transistors = 30 Package Type = TO-247-4LD
onsemi
FGHL50T65MQDTL4
vanaf € 2,011*
per stuk
 
 stuk
onsemi
NXH40B120MNQ0SNG
vanaf € 62,65*
per stuk
 
 stuk
onsemi FGHL50T65SQDT IGBT, 100 A 650 V, 3-Pin TO-247 (1 zoekresultaat) 
The ON Semiconductor IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential.175°C maximum jun...
onsemi
FGHL50T65SQDT
vanaf € 1,935*
per stuk
 
 stuks
onsemi MJ2955G PNP Transistor, -15 A, -70 V, 3-Pin TO-204AA (1 zoekresultaat) 
The PNP Bipolar Power Transistor is designed for use in high power amplifier and switching amplifier applications. The 2N3055 (NPN) and MJ2955 (PNP)are complementary devices.DC Current Gain - hFE =...
onsemi
MJ2955G
vanaf € 3,182*
per stuk
 
 stuks
onsemi NXH40T120L3Q1SG IGBT Module 1200 V, 44-Pin Q13-TNPC, Surface Mount (1 zoekresultaat) 
The NXH40T120L3Q1PG/SG is a case power module containing a three channel T-type neutral-point clamped (TNPC) circuit. Each channel has a two 1200 V, 40 A IGBTs with inverse diodes and two 650 V, 25...
onsemi
NXH40T120L3Q1SG
vanaf € 1.282,64703*
per 21 stuks
 
 verpakking
onsemi FGHL75T65LQDTL4 IGBT, 80 A 650 V TO-247-4LD (1 zoekresultaat) 
Maximum Continuous Collector Current = 80 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = 20V Number of Transistors = 30 Package Type = TO-247-4LD
onsemi
FGHL75T65LQDTL4
vanaf € 4,403*
per stuk
 
 stuk
onsemi MJB45H11G PNP Digital Transistor, -80 V, 2 + Tab-Pin D2PAK (TO-263) (1 zoekresultaat) 
The PNP Bipolar Power Transistor is designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power...
onsemi
MJB45H11G
vanaf € 25,14*
per 50 stuks
 
 verpakking
onsemi NXH300B100H4Q2F2PG IGBT Module, 73 A 1000 V 93x47 (PRESSFIT) (Pb-Free and Halide-Free Press Fit Pins), Q2BOOST - (1 zoekresultaat) 
Maximum Continuous Collector Current = 73 A Maximum Collector Emitter Voltage = 1000 V Maximum Gate Emitter Voltage = ±20V Number of Transistors = 6
onsemi
NXH300B100H4Q2F2PG
vanaf € 210,113*
per stuk
 
 stuk
onsemi FGHL75T65MQDTL4 IGBT, 80 A 650 V TO-247-4LD (1 zoekresultaat) 
Maximum Continuous Collector Current = 80 A Maximum Collector Emitter Voltage = 650 V Maximum Gate Emitter Voltage = 20V Maximum Power Dissipation = 375 W Package Type = TO-247-4LD
onsemi
FGHL75T65MQDTL4
vanaf € 2,869*
per stuk
 
 stuk
onsemi MJD112-1G NPN Darlington Transistor, 2 A 100 V HFE:1000, 3-Pin IPAK (TO-251) (3 zoekresultaten) 
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard. NPN Darlington Transistors, ON Semiconductor
onsemi
MJD112-1G
vanaf € 0,421*
per stuk
 
 stuk
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